METHOD OF MANUFACTURING CAPACITOR

摘要

The method improves the reliability of capacitors by forming a native oxide layer and a Ta2O5 layer. The method comprises (A) growing a native oxide (4) on an n-type Si substrate; (B) depositing a Ta2O5 layer (5) on the native oxide; (C) oxidizing the weakspot under oxidizing atmosphere; (D) forming a metal electrode (3) by sputtering or vapor depositing.