| 摘要 |
PURPOSE:To provide a thin film growing method and device therefor improved in the cluster molecular beam of metal, semiconductor or carbon. CONSTITUTION:The multiphase flow of the fine-particle material and an inert gas is supplied to the plasma torch 117 of a forming chamber 100, and the cluster molecule 114 generated by the high-frequency induced plasma method is deposited on a collector 116. The collector 116 is transferred to an ionization chamber 180 and heated by a heater 123b to generate a cluster molecule vapor 114, and the vapor is ionized, accelerated and sent to an analyzer tube 191. The cluster molecular ions 114b describe different paths according to the mass number in the analyzer tube 191, and only the cluster ion 114c passing through a skimmer 192 irradiates the substrate 124 to form a thin film 125. Consequently, a high-purity cluster molecular beam of the same mass number is effectivly generated, and various thin films are formed by jointly using a molecular beam source supplying other materials, as necessary. |
