发明名称 |
Method of doping a group III-V compound semiconductor |
摘要 |
A method of doping a Group III-V compound semiconductor with an impurity, wherein after an undoped film of SiOx and a film for preventing the diffusion of Group V atoms (e.g., an SiN film) are formed in this order on a crystal of Group III-V compound semiconductor, the sample is subjected to at least one heat treatment to cause silicon in the SiOx film to diffuse into the Group III-V compound semiconductor, thereby forming a doped layer. Using this doped layer forming method, field-effect transistors, diodes, resistive layers, two-dimensional electron gas or one-dimensional quantum wires, zero-dimensional quantum boxes, electron wave interference devices, etc. are fabricated.
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申请公布号 |
US5350709(A) |
申请公布日期 |
1994.09.27 |
申请号 |
US19930075232 |
申请日期 |
1993.06.10 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
HARADA, YASOO;MATSUSHITA, SHIGEHARU;TERADA, SATOSHI;FUJII, EMI;KUROSE, TAKASHI;HIGASHINO, TAKAYOSHI;YAMADA, TAKASHI;NAGAMATSU, AKIHITO;INOUE, DAIJIROU;MATSUMURA, KOUJI |
分类号 |
H01L21/18;H01L21/22;H01L21/225;H01L21/285;H01L21/314;H01L21/324;H01L21/329;H01L21/335;H01L21/338;H01L21/8252;H01L27/06;H01L29/08;H01L29/10;H01L29/66;H01L29/775;H01L29/778;H01L29/812;H01L29/8605;(IPC1-7):H01L21/225 |
主分类号 |
H01L21/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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