发明名称 REPAIRING CIRCUIT OF MEMORY
摘要 The circuit can repair any of the failure columns by gathering the Redundant columns in one block. The circuit comprises: block 0 (1), with the Redundant columns containing Y decoder (1-1) for repairing, Y decoder (1-2) and sense amplifier (1-3), for receiving word line signal from circuit part (A) which generate SAE. from block i to block n (1-N) containing Y decoder, sense amplifier and receiving signal SAEi, SAEn from circuit part (B).
申请公布号 KR940008726(B1) 申请公布日期 1994.09.26
申请号 KR19920027297 申请日期 1992.12.31
申请人 HYUNDAI ELECTRONICS CO., LTD. 发明人 PARK, JU - WON;KWON, KYU - WAN
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
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