发明名称 |
REPAIRING CIRCUIT OF MEMORY |
摘要 |
The circuit can repair any of the failure columns by gathering the Redundant columns in one block. The circuit comprises: block 0 (1), with the Redundant columns containing Y decoder (1-1) for repairing, Y decoder (1-2) and sense amplifier (1-3), for receiving word line signal from circuit part (A) which generate SAE. from block i to block n (1-N) containing Y decoder, sense amplifier and receiving signal SAEi, SAEn from circuit part (B).
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申请公布号 |
KR940008726(B1) |
申请公布日期 |
1994.09.26 |
申请号 |
KR19920027297 |
申请日期 |
1992.12.31 |
申请人 |
HYUNDAI ELECTRONICS CO., LTD. |
发明人 |
PARK, JU - WON;KWON, KYU - WAN |
分类号 |
G11C29/00;(IPC1-7):G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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