摘要 |
A device for zone-melting recrystallisation of semiconductor films on semiconductor substrates has a heating body which is arranged at a predetermined distance above the semiconductor substrate and is moved in a predetermined direction with a uniform speed over the semiconductor substrate. The heating body has a strip-heating element which, with the exception of a surface lying opposite the semiconductor substrate, is covered with an insulating and heat-resistant film having low heat radiation. Since the heat emitted by the surfaces of the heating element, with the exception of the surface lying opposite the substrate, is intercepted by the insulating and heat-resistant film, the width of the melting zone produced in the semiconductor film is reduced. <IMAGE> |
申请人 |
MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP |
发明人 |
DEGUCHI, MIKIO, AMAGASAKI, HYOGO, JP;NAOMOTO, HIDEO, AMAGASAKI, HYOGO, JP;ARIMOTO, SATOSHI, AMAGASAKI, HYOGO, JP |