| 摘要 |
PURPOSE:To prevent deterioration of alignment accuracy at the time of production of semiconductors even when temp. of reticle is raised in an exposure process to cause thermal expansion. CONSTITUTION:A reticle is produced by patterning a reticle 7 on a glass substrate 4. In this process, when the reticle 7 is patterned, the process is performed at a temp. state according to the area rate to be patterned. Concretely, in a chamber 1 temp.-controlled with a temp. controller 3b, a reticle substrate 4 is mounted on a reticle holder 2 which is temp.-controlled by the temp. controller 3a, and the pattern is marked on the substrate 4 with an electron beam 6 emitted from an electron beam ejector 5. The saturated rise temp. of the reticle 7 is inputted to the temp. controllers 3a, 3b, and the reticle is irradiated with the electron beam 6 at the inputted temp. for patterning the reticle 7. Thereby, the reticle 7 is patterned in a expanded state more than in the normal temp. state, and the dimension of the pattern is made accurate and the same as the design value. |
