| 摘要 |
PURPOSE:To industrially form a silicon oxide semiconductor film having a low light absorption coefficient and high photoconductivity by resolving a gaseous raw material which contains at least SiH4, CO2, and H2 in a state where CO2/(SiH4+CO2) becomes a specific value. CONSTITUTION:In the method which is used for forming an SiO semiconductor film composed of a-SiO2 containing a microcrystalline layer of Si, the SiO semiconductor film is formed by resolving a gaseous raw material which contains at least SiH4, CO2, and H2 in a state where CO2/(SiH4+CO2) becomes <=0.6. At the time of decomposing the mixed gas, it is effective to generate glow discharge in the gas at a high-frequency power density of >=40mW/cm<2>. The formed SiO semiconductor film has a absorption coefficient <=10<6>cm<-1> against light having a wavelength of >=340nm and photoconductivity of >=10<-6>S/cm. In addition, it is effective, to use a p-type a-SiO layer 3 or n-type a-Si layer 6 obtained by mixing a doping gas with the gaseous raw material as the window layer of a solar battery. |
