SEMICONDUCTOR MEMORY DEVICE AND ITS MANUFACTURE

摘要

PURPOSE:To acquire a semiconductor memory device and its manufacturing method, wherein shift of a pattern during storage node formation does not matter and a mask alignment margin is enlarged in a memory cell of a semiconductor memory device. CONSTITUTION:An electrode plug 14 is provided inside a storage node direct contact 9, a storage node direct contact side wall 12 of an insulation film is formed to reduce a diameter of a contact from an port of a contact to a surface of the electrode plug 14 and the electrode plug 14 inside a contact and a storage node 10 make a continuity through a reduced hole diameter.