| 摘要 |
PURPOSE:To provide a semiconductor light-emitting device which can be enhanced in emission efficiency. CONSTITUTION:An antireflection film 201 is formed on an emission plane 121a. A groove 127 is provided to a region which confronts an electrode 125 penetrating a PN junction 123 from an underside 122a. The groove 127 is tapered. A side face 141 is provided with a slope 141a which is tilted inward toward the underside 122a crossing the PN junction 123. An antireflection film 171 is formed on the underside 122a, the inner side of the groove 127, and the slope 141a. By this setup, light directed to an electrode 125 is lessened by the groove 127, and light traveling in parallel with the P-N junction 123 is reflected by the slope of the groove 127 and the slope 141a of the side face 141 and directed toward the emission plane 121a. |
