| 摘要 |
PURPOSE:To provide a nonvolatile semiconductor memory device of high reliability which can surely avoid false recognition of data even if the number of rewritings is increased. CONSTITUTION:One memory cell is formed of two MOS transistors 30, 31 with floating gates 14, 15. In the two MOS transistors 30, 31, different logical levels are always input and output. If a pair of outputs obtained in this way are differentially amplified, false recognition of data caused by variation of threshold value of the MOS transistors 30, 31 can be avoided on judgment of '0', '1' of data of the memory cell. |
