| 摘要 |
PURPOSE:To enable light emitted from a light emitting diode to be sent out efficiently by a method wherein specific single crystals each possessed of a P-N junction are successively grown in layers on a GaP single crystal substrate. CONSTITUTION:An epitaxial initial layer 2 is grown on a GaP substrate 1, and successively an N-type grading layer 3 is formed. A nitrogen-free N-type GaAs1-xPx (0.4<=X<=0.9) layer is grown to serve as a relaxation layer 4 so as to relax defects in the grading layer 3. Then, a nitrogen-loaded N-type GaAs1-xPx(0.4<=X<=0.9) epitaxial single crystal layer is grown as a light emitting layer 5. In succession, a nitrogen-loaded P-type GaAs1-xPx (0.4<=X<=0.9) epitaxial single crystal layer doped with zinc is grown to serve as a low concentration P-type light emitting layer 6. Thereafter, a nitrogen-free P-type GaAs1-xPx (0.4<=X<=0.9) layer is grown so as to serve as a high concentration P-type injection layer 7. |
