| 摘要 |
PURPOSE:To enable an AlGaAs LED of excellent, physical properties to be manufactured high in mass productivity by a method wherein an AlGaAs region is optimized in a profile of AlAs mixing crystal ratio. CONSTITUTION:A first crystal region 1 (e.g. P-type AlGaAs crystal region) is epitaxially grown on a P-type GaAs substrate, then a second crystal region 2 (e.g. N-type AlGaAs crystal region) is epitaxially grown thereon, and lastly a third crystal region 3 (e.g. N-type AlGaAs crystal region) is epitaxiaily grown. An AlAs crystal ratio profile is so set that the front, side of each crystal region is set higher in an AlAs crystal ratio (a ratio of Al crystal to As crystal in AlGaAs crystal) than the rear side, and the interface of the crystal region with the adjacent crystal region closer to the rear of a chip than the former is set lower in an AlAs crystal ratio than that of the adjacent crystal region. By this setup, an AlGaAs LED excellent on physical properties can be manufactured high in mass productivity. |
