| 摘要 |
PURPOSE:To overcome the problem that when a high electric field is applied the electrons make transition to a satellite valley with large effective mass to reducing the drift speed to the saturated speed characteristic of a material and to enhance the high electric field electron transfer characteristic of semiconductor materials. CONSTITUTION:In a quantum wire structure comprising a quantum well region 3 and quantum barriers 2A, 2B, 2C, among the lowermost energy EC1 of a conduction band of a semiconductor forming a quantum well, the lowest energy EL1 in an L valley and the lowest energy EC2 of a conduction band of a semiconductor forming a quantum barrier, there is a relationship of EC1<=EL1<EC2 and the longitudinal direction of a quantum wire structure is (100) or made parallel to the crystal orientation equivalent to (100). As electrons run in the (100) orientation in the conduction band and L valley in this quantum wire structure, an effective mass is made smaller to enhance the high electric field drift speed. |
