THIN FILM TRANSISTOR AND MANUFACTURE THEREOF

摘要

PURPOSE:To provide device structure of a TFT suppressing a photoconductive defect to be caused by irradiation with back light on a semiconductor film while not increasing the number of processes of preparing the TFT for an active matrix type liquid crystal display device, and preparation thereof. CONSTITUTION:This is preparation of a TFT having a means where after integrally processing the semiconductor film 4/gate insulating film 3 formed on a substrate 1 while having a photoresist 6 as a mask, mainly the semiconductor film is processed by dry etching using chlorine based gas (mixed gas of BCl3 and Cl2) 51 with the photoresist 6 as a mask and the semiconductor film after processing is arranged in the innermore side than a gate electrode.