| 摘要 |
<p>PURPOSE:To eliminate difference in the etching speed between an aperture pattern adjacent to the light-shielding film on the outer edge of a substrate and an aperture pattern distant from the light-shielding film and to obtain equal exposure performance by forming an aperture groove around the exposure area transferred on a wafer. CONSTITUTION:An opening groove 13 is formed arond the exposure area 11 transferred on a wafer so that no influence is given to the exposure area by cutting off a RF bias applied through a clamp. The width of the groove 13 is larger than the thickness of the substrate in order to shut the effect of RF bias applied on the substrate surface directly through the clamp and to make the effect of RF bias almost equel to the effect of the RF bias applied through the substrate main body from the back surface of the substrate. Thereby, by forming the opening groove 13, etching speed in an area adjacent to the light shielding part in the outer circumference is made equal to that in an area distant from the part, and the phase shift amounts of the shift pattern on both areas are made equal to each other.</p> |
