Electron-beam lithography device with an electron-optics correction system

摘要

An electron-beam lithography device which uses a cell-projection method and contains a system for the correction of the electron optics. A shaped electron beam (5) which has been sent through a cell with a complex shape (contour) is pointed at a stage (21) on which a substrate (2) is arranged. A fine hole (3) is formed in the substrate, behind the fine hole there is furthermore arranged an electron detector (4) which receives the electrons which pass the fine hole. The output signals of the electron detector are processed so as to represent the degree of the focus correction and/or the astigmatism correction of the electron optics. When a line-space pattern is used for shaping the electron beam, the output signals of the electron detector have a series of peak-intensity levels which indicate the optimum correction of the electron optics when they are at a maximum. Ideally, there is arranged between the substrate with a fine hole and the electron detector a limiting diaphragm for limiting the detection of the scattered electrons which have not passed the fine hole. <IMAGE>