发明名称 SEMICONDUCTOR DEVICE
摘要 PURPOSE:To improve operation margin without increasing a cell area regarding a multi-emitter bipolar memory by providing a fixed current source function between a low potential word line (hold line) and an emitter at the hold side. CONSTITUTION:The title device has a memory cell for crossing and connecting a collector and a base of two multi-emitter transistors with a plurality of emitters mutually, for connecting one emitter to a bit select line and for connecting the other emitter to a low potential word line (hold line). A high resistance film 13 is provided between a low potential word line 17 and an emitter electrode 12 connected to the low potential word line.
申请公布号 JPH06268170(A) 申请公布日期 1994.09.22
申请号 JP19930049721 申请日期 1993.03.11
申请人 FUJITSU LTD 发明人 GOTO HIROSHI
分类号 H01L27/102;H01L21/8229 主分类号 H01L27/102
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