| 摘要 |
PURPOSE:To provide a forming method of an X-ray mask wherein the fine working of an X-ray absorber pattern is easily possible. CONSTITUTION:Resist solution wherein 1.0g of linear poly(siloxane) which has C-O-Si bond for each monometric unit and 10mg of triphenyl trifluoro methanesulfonate are dissolved is spin-coated on a W film 34 of 1.0mum in thickness which is formed on a BN film 30 via a Ti film 36. A resist film 38 of 0.3mum in thickness is formed by baking at 80 deg.C for 1 minute, and selectively irradiated with an electron beam, under the condition that the acceleration voltage is 20kV and the dose is 5mum/cm<2>. After baking at 120 deg.C for 2 minutes, development is performed. Thus an oxide film pattern 40 is formed. Next SF6 is introduced, and the W mask 34 is etched by applying the oxide film pattern 40 to an etching mask. Thereby an X-ray absorber pattern 42 is formed. |
