| 摘要 |
<p>PURPOSE:To obtain such a device having excellent characteristics of an insulating film formed by anodic oxidation, and to obtain a Ta film or Nb film showing sufficiently slow etching rate than Al for active ion etching with chlorine gas. CONSTITUTION:Wirings and electrodes of the device consist of a two-layered film comprising a lower layer 2 of TaN allay or NbN alloy containing 15-40 atomic % N and an upper layer 3 of Al or Al-alloy. As for wiring terminals, only the upper layer is selectively removed so that the terminals consist of only the lower TaN alloy film or NbN allay film containing a specified amt. of nitrogen. By this method, a liquid crystal display device with high picture quality and high reliability can be produced without increasing the number of processes.</p> |
