Chemical vapor deposition method and apparatus therefor.

摘要

Fixed amounts of a liquid source for a chemical vapor deposition process is supplied continuously from a source tank (12) and through a liquid mass flow controller (14) to a three-way valve (16). Inside the three-way valve (16), the liquid source is evaporated to generate a source gas by contacting a high-temperature carrier gas which flows therethrough and becomes mixed with the source gas. The gas mixture thus generated is supplied into a process chamber (24) for a chemical vapor deposition process. The carrier gas may be heated by a gas heater (18, 20) before entering the three-way valve. Alternatively, the three-way valve (16) may be enclosed inside a thermostatic container, the carrier gas being heated inside the container.