Short channel trenched DMOS transistor.

摘要

A trenched transistor comprises a substrate defining a trench containing a conductive gate electrode, and a body region of a second conductivity type extending from a principal surface of the substrate adjacent to the trench into the substrate to a depth less than that of the trench. A portion of the body region immediately adjacent to the trench is shallower with respect to the principal surface than is another portion of the body region away from the trench. An edge of the body region immediately adjacent the trench slopes such that a portion of the edge immediately adjacent the trench is closer to the principal surface. A source region of the first conductivity type is formed in the substrate.