Method of producing boron-containing and/or phosphorous-containing silicate glass layers for highly integrated circuits.,申请号EP19890106621-传众专利搜索

发明名称	Method of producing boron-containing and/or phosphorous-containing silicate glass layers for highly integrated circuits.
摘要
申请公布号	EP0339385(B1)	申请公布日期	1994.09.21
申请号	EP19890106621	申请日期	1989.04.13
申请人	SIEMENS AKTIENGESELLSCHAFT	发明人	TREICHEL, HELMUTH, DIPL.-ING.;FUCHS, DIETER, DIPL.-ING.;HIEBER, KONRAD, DR.;KRUCK, THOMAS, PROF. DR.;SPINDLER, OSWALD, DR.;NEUREITHER, BERNHARD, DIPL.-ING.
分类号	B32B17/06;C03B8/04;H01L21/225;H01L21/316;(IPC1-7):H01L21/316;H01L21/82	主分类号	B32B17/06
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