发明名称 |
Method of biasing a nonvolatile flash-EEPROM memory array. |
摘要 |
<p>To reduce the read and write errors caused by depleted memory array cells being turned on even when not selected, the nonselected memory cells are so biased as to present a floating terminal and a terminal at a positive voltage with respect to the substrate region. In this way, the threshold voltage of the above cells (the minimum voltage between the gate and source terminals for the cell to be turned on) increases due to the "body effect", whereby the threshold voltage depends, among other things, on the voltage drop between the cell terminal operating as the source and the substrate, and increases alongside an increase in the voltage drop. <IMAGE></p> |
申请公布号 |
EP0616333(A1) |
申请公布日期 |
1994.09.21 |
申请号 |
EP19930830110 |
申请日期 |
1993.03.18 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
CAMPARDO, GIOVANNI;CRISENZA, GIUSEPPE;DALLABORA, MARCO |
分类号 |
G11C17/00;G11C16/04;G11C16/06;G11C16/30;H01L21/8247;H01L27/115;(IPC1-7):G11C16/04 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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