发明名称 |
Threshold switching device |
摘要 |
This invention relates to a method of forming a threshold switching device which exhibits negative differential resistance and to the devices formed thereby. The method comprises depositing a silicon dioxide film derived from hydrogen silsesquioxane resin between at least two electrodes and then applying a voltage above a threshold voltage across the electrodes. |
申请公布号 |
US5348773(A) |
申请公布日期 |
1994.09.20 |
申请号 |
US19930082112 |
申请日期 |
1993.06.28 |
申请人 |
DOW CORNING CORPORATION |
发明人 |
MICHAEL, KEITH W.;PERNISZ, UDO C. |
分类号 |
H01L29/86;G06N3/063;H01L45/00;H01L49/02;(IPC1-7):B05D3/06;B05D5/12;B05D3/02 |
主分类号 |
H01L29/86 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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