发明名称 Enhancement circuit and method for ensuring diactuation of a switching device
摘要 An output driver circuit of a DRAM is wired in a push-pull arrangement. A CMOS transistor arrangement provides a strong output signal. This transistor arrangement comprises the pull-up transistor circuit of the push-pull arrangement. A bootstrap circuit gates the NMOS of the CMOS causing an incremental increase in CMOS drain current. The invention is an enhancement circuit for ensuring the deactuation of the pull-down portion of the push-pull arrangement during the action of the CMOS transistor arrangement.
申请公布号 US5349247(A) 申请公布日期 1994.09.20
申请号 US19920893880 申请日期 1992.06.05
申请人 MICRON TECHNOLOGY, INC. 发明人 HUSH, GLEN;THOMANN, MARK R.
分类号 H03K19/017;(IPC1-7):H03K14/20 主分类号 H03K19/017
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