发明名称 |
Protection diode for a vertical semiconductor component |
摘要 |
A high voltage avalanche diode formed in an integrated circuit includes vertical power components. The integrated circuit is formed in an N-type semiconductor substrate. The rear surface of the substrate corresponds to a first main electrode of the power components, whose second main electrodes correspond to regions formed in P-type wells which are formed in the front surface of the substrate. The diode includes a P-type region wound substantially as a spiral that is formed in the front surface of the substrate; non-overlapping N-type regions formed in equal number in each turn of the spiral and forming with the spiral elemental avalanche diodes; metallizations connecting in series the elemental diodes; and a connection between an end of the spiral and the first electrode.
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申请公布号 |
US5349232(A) |
申请公布日期 |
1994.09.20 |
申请号 |
US19930085310 |
申请日期 |
1993.06.29 |
申请人 |
SGS-THOMSON MICROELECTRONICS S.A. |
发明人 |
MILLE, JACQUES;MEUNIER, PHILIPPE |
分类号 |
H01L29/861;H01L27/02;H01L29/78;H01L29/866;(IPC1-7):H01L23/60;H01L23/62;H01L29/90 |
主分类号 |
H01L29/861 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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