| 摘要 |
PURPOSE:To obtain an AlN substrate excellent in heat conductivity according to sintering at a relatively low temperature by using AlN powder having a relatively large particle diameter as nuclear particles, coating the surface thereof with AlN ultrafine particles and providing composite particles. CONSTITUTION:This low-temperature sinterable type AlN substrate is composed of a sintered compact of coated type composite particles prepared by using AlN powder having 0.3-10mum particle diameter as nuclear particles and coating the surface thereof with AlN ultrafine particles having <=0.1mum particle diameter and excellent in heat conductivity. As a result of investigations made on a method for utilizing the AlN ultrafine particles without using a sintering assistant component such as Y2O3, CaO, YE3, CaF2 or Al2O3 which deteriorates the heat conductivity for lowering the sintering temperature of the AlN powder, the powder having the relatively large particle diameter is used as the nucleus and the ultrafine particles are applied to the surface thereof to afford composite particles as opposed to the conventional use of only the ultrafine particles. Thereby, the substrate excellent in the heat conductivity can be produced by sintering at a relatively low temperature. This substrate is preferred as a ceramic IC package or a circuit base used as electronic device products, etc. |
