发明名称 METHOD FOR FORMING OXIDATION-RESISTANT COATING FILM ON CARBONACEOUS SUBSTRATE
摘要 PURPOSE:To provide a method for forming an oxidation-resistant coating film on a carbonaceous substrate, capable of forming a tightly stuck dense and stable SiC coating film and a glassy surface layer thereon in a simplified process and in a shortened treatment time. CONSTITUTION:A SiC coating film is formed on the surface of a carbonaceous substrate by a CVD method for reductively pyrolzing an organic silicon halide compound at <=1000 deg.C, and the SiC coating film-formed carbonaceous substrate is subjected to the first coating step for forming a SiC coating layer having n inclined functional tissue at >=1350 deg.C in argon and subsequently to the second coating step for forming a SiC coating film layer by the same CVD method as the above-method at >=1100 deg.C in the same reaction system. In another method, the third coating step for vacuum-impregnating the surface of the SiC coating layer formed by an above-method with a solution produced by hydrolyzing and polymerizing by an alkoxide method is added.
申请公布号 JPH06263569(A) 申请公布日期 1994.09.20
申请号 JP19930073022 申请日期 1993.03.08
申请人 TOKAI CARBON CO LTD 发明人 SHIOTANI YOSHIHIRO
分类号 C01B31/02;C04B35/52;C04B41/87;C23C16/32 主分类号 C01B31/02
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