| 摘要 |
PURPOSE:To provide the phase shift mask which has high reliability as the phase shift mask for an exposure device using i rays and KrF excimer laser as light sources at the time of using the phase shift mask using a silicon oxide film as a phase shift layer and enables the effective utilization of energy for exposure and the blank to be used for this mask and process for production of such mask and blank. CONSTITUTION:A phase shift film has at least a transparent substrate 1 and the phase shift layer 3 consisting of oxide of silicon. The phase shift layer 3 of this phase shift mask is subjected to a heat treatment under a reduced pressure, more preferably under the reduced pressure and in an inert gaseous atmosphere after formation of the phase shift layer 3. |
