MANUFACTURE OF ACTIVE MATRIX SUBSTRATE

摘要

PURPOSE:To make it possible to manufacture an active matrix substrate capable of rapidly switching pixels, by crystallizing a silicon thin film by irradiation with an exima laser so that the whole manufacturing region of the active matrix substarate is included. CONSTITUTION:At first, an oxide silicon thin film UNL and a silicon thin film SLR are deposited one after another on a glass substrate GLS. Then, An exima laser beam LSB (LSR) is applied to the laser beam irradiation region RLR to crystallize the silicon thin film SLR so that the display region ALC of each active matrix matrix substarate is sufficiently covered. Only the region RMX is crystallized where the energy of the laser beam LDR required for the crystallization so as to make a polycrystalline silicon thin film PSL. And, the crystallized silicon thin film PSL is patterned, thereby allowing the switching to be done by means of a transistor with superior characteristics.