发明名称 SEMICONDUCTOR RADIATION DETECTOR AND MANUFACTURE THEREOF
摘要 PURPOSE:To provide a structure of array semiconductor radiation detectors and a method for the manufacture of a radiation rays detector of such a structure wherein a high positional resolution is obtained through a simple manufacturing process. CONSTITUTION:This semiconductor radiation detector is constituted as follows: (a) It includes a plurality of substrates composed of compound semiconductor 1 sensitive to radiation, (b) the substrates are placed in a way that their machined faces are in tight contact with each other, (c) opposite faces, other than the machined faces, of each substrate have a electrode 2 and 3, and (d) at least one of the electrodes 2 is isolated from the machined faces.
申请公布号 JPH06260671(A) 申请公布日期 1994.09.16
申请号 JP19930072764 申请日期 1993.03.09
申请人 JAPAN ENERGY CORP 发明人 IWASE YOSHITOMO
分类号 G01T1/24;H01L31/09;(IPC1-7):H01L31/09 主分类号 G01T1/24
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