| 摘要 |
PURPOSE:To obtain a semiconductor storage with a cylindrical capacitor which is improved so that capacitor capacity can be fully secured regardless of a small occupation area. CONSTITUTION:Word lines 4a, 4b, 4c, and 4d and a bit line 11 are formed on a semiconductor substrate 1 where conductive layers 6a, 6b, 6c, and 6d are formed on a main surface. The word line 4c is covered with an insulation film 8c, the word line 4d is covered with an insulation film 8d, and the bit line 11 is covered with an insulation film 12. A barrier film 14 for protecting the insulation films 8a, 8b, 8c, and 8d and the insulation film 12 from an etchant are provided selectively on the specific regions of them. A cylindrical storage node 170 is electrically connected to the conductive layer 6b. A cell plate 22 is covered including a capacitor insulation film 112 on the outer surface of the storage node 170 consisting of a bottom conductive part 17b and a side wall conductive part 17a. |
