GROWTH OF SEMICONDUCTOR CRYSTAL AND MANUFACTURE OF MOS TRANSISTOR,申请号JP19930070709-传众专利搜索

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发明名称	GROWTH OF SEMICONDUCTOR CRYSTAL AND MANUFACTURE OF MOS TRANSISTOR
摘要
申请公布号	JPH06260416(A)	申请公布日期	1994.09.16
申请号	JP19930070709	申请日期	1993.03.08
申请人	SONY CORP	发明人	TSUKAMOTO HIRONORI
分类号	H01L21/20;H01L21/205;H01L21/265;H01L21/336;H01L29/78;H01L29/786;(IPC1-7):H01L21/20;H01L29/784	主分类号	H01L21/20
代理机构		代理人
主权项
地址

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