A CONTROLLABLE ISOTROPIC PLASMA ETCHING TECHNIQUE FOR THE SUPPRESSION OF STRINGERS IN MEMORY CELLS
摘要
In the manufacture of memory cells, horizontal etching is controlled in a manner which prevents the formation of stringers between adjacent cells without undercutting the sidewalls of a memory cell.
申请公布号
WO9420981(A1)
申请公布日期
1994.09.15
申请号
WO1994US02500
申请日期
1994.03.08
申请人
NATIONAL SEMICONDUCTOR CORPORATION
发明人
PERRY, JEFFREY, ROBERT;SADJADI, REZA, S., M.;LUTTINGER, KRISTEN, ANN