| 摘要 |
<p>A thin-film field-effect transistor is fabricated by forming an electrically insulative island (23) between the source and the drain. A cap (61) is formed on the island with a brim that overhangs the island. A layer of source-drain metal (64, 65), which will subsequently constitute the source and drain contacts, is then deposited upon the source, the drain, and the cap (61), but the overhang creates an exposed region which can be attacked by an etchant. When the etchant is applied, it etches away the cap (61), thereby lifting off the source-drain metal (64, 65) which coated the cap, leaving the fully formed source and drain contacts separated by the island.</p> |
