Method for the connection of a bipolar transistor

摘要

In order to produce circuits operating in Band G or H (new NATO standard designation) on epoxy-glass substrates metallised with copper, the invention provides for a transistor (1) to be used which is incorporated in a surface-mounted housing and, in this case, for a circuitry method to be used according to which the earth terminals (4) are bent to the same level as the housing and are threaded into metallised holes before they are soldered, while the other terminals (5) are connected on the surface in the normal manner. <IMAGE>