| 摘要 |
<p>PURPOSE:To lessen the quantity of use of a polycrystalline transistor by making the side larger in absolute value of a threshold a channel for write, between channel regions, and making the side smaller in it a channel region for read, and positioning one of pn junctions in the channel region for write, and the other of the pn junctions in the channel region for read. CONSTITUTION:A field oxide film is formed on a silicon semiconductor substrate, and an active region 12 is formed, and this region 12 has a source 13 and the first and second pn junctions 14 and 15. Two regions different in threshold are formed on the substrate by partially changing the thickness of the insulating film, and the side larger in threshold is made a channel region 17 for write and the side smaller in it is made a channel region 18 for read. The source 13 is made in the shape of reverse L astride both channel regions 17 and 18, and it is connected with the bit line 19 for write. The drain 14 is positioned in the channel region 18 for read, and is connected with a pit line 21. The pn junction 15 is positioned ion the channel region 17 for write.</p> |
