| 摘要 |
<p>PURPOSE:To prevent the deterioration in performance of a thin film transistor by controlling the shape of the section having a step on the end face patterned on the lower layer so as to reduce thickness and deformation of a film due to the step of the film to be deposited on an upper layer. CONSTITUTION:A pattern side wall having a step of a source and drain electrode wiring films 2a, 2b to be formed on a transparent substrate 1 of glass or quartz is spin-coated with a conductive material 4 or insulative material which is diffused in a solution. And, only the conductive material 4 or insulative material solid body is left on the pattern side wall of the wiring film by evaporating only the solvent by heat-treatment to control the inclination angle of the section having a step of the end face of the electrode wiring pattern. Thus, the thickness of the film of the semiconductor film 6 to be deposited on the upper layer will not be thinned in the etching end face having the step of the source and drain electrode wiring films 2a, 2b.</p> |
