发明名称 |
Multi quantum well semiconductor laser and optical communication system using the same. |
摘要 |
<p>A multi quantum well semiconductor laser includes an InP substrate and a multi-layered structure formed on the InP substrate, lasing at 1.29 mu m to 1.33 mu m wavelength, wherein the multi-layered structure includes at least a multi quantum well active layer, the multi quantum well active layer including InGaAsP well layers and InGaAsP barrier layers alternately provided, the InGaAsP barrier layers are lattice matched with the InP substrate, and a bandgap wavelength of the InGaAsP barrier layers is substantially equal to 1.05 mu m. <IMAGE></p> |
申请公布号 |
EP0615322(A2) |
申请公布日期 |
1994.09.14 |
申请号 |
EP19940103790 |
申请日期 |
1994.03.11 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KITOH, MASAHIRO;OTSUKA, NOBUYUKI;ISHINO, MASATO;MATSUI, YASUSHI |
分类号 |
H01S5/062;H01S5/12;H01S5/34;H01S5/343;(IPC1-7):H01S3/19;H04B10/00 |
主分类号 |
H01S5/062 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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