发明名称 Plasma-enhanced magnetron-sputtered deposition of materials
摘要 Plasma-enhanced magnetron-sputtered deposition (PMD) of materials is employed for low-temperature deposition of hard, wear-resistant thin films, such as metal nitrides, metal carbides, and metal carbo-nitrides, onto large, three-dimensional, irregularly shaped objects (20) without the requirement for substrate manipulation. The deposition is done by using metal sputter targets (18) as the source of the metal and immersing the metal sputter targets in a plasma (16) that is random in direction and fills the deposition chamber (12) by diffusion. The plasma is generated from at least two gases, the first gas comprising an inert gas, such as argon, and the second gas comprising a nitrogen source, such a nitrogen, and/or a carbon source, such as methane. Simultaneous with the deposition, the substrate is bombarded with ions from the plasma by biasing the substrate negative with respect to the plasma to maintain the substrate temperature and control the film microstructure. The substrate, metal targets, and plasma are all electrically decoupled from each other and from walls (14) of the deposition chamber (12), so as to provide independent electrical control of each component. The PMD process is applicable not only to the deposition of hard coatings, but also can be applied to any thin film process such as for electrically and thermally conductive coatings and optical coatings, requiring simultaneous, high-flux, ion-bombardment to control film properties.
申请公布号 US5346600(A) 申请公布日期 1994.09.13
申请号 US19920929986 申请日期 1992.08.14
申请人 HUGHES AIRCRAFT COMPANY 发明人 NIEH, SIMON K.;MATOSSIAN, JESSE N.;KRAJENBRINK, FRANS G.
分类号 C23C14/34;C23C14/00;C23C14/32;C23C14/35;C23C14/48;H01J37/34;(IPC1-7):C23C14/35 主分类号 C23C14/34
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