| 摘要 |
A semi-insulating compound semiconductor device includes an input terminal portion having a protection diode connected thereto and an element formation region and which is provided with a conduction region having the highest potential in the semiconductor device disposed between the input terminal portion and the element formation region. With such an arrangement, low-frequency oscillation of the drain current ID or drain conductance gm due to a leak age current from the protection diode connected to the input terminal portion can be prevented from occurring and thus the semi-insulating compound semiconductor device can operate satisfactorily with stabilized characteristics.
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