| 摘要 |
PURPOSE:To provide a method wherein a cBN substrate used for a semiconductor substrate, etc., is polished with high smoothness. CONSTITUTION:A polishing material or a polishing disc is formed of an oxygen containing material (SiO2, Al2O3, ZrO2, CaO, CrO3, and MgO) to effect polishing. Probably, oxygen in the polishing material and the polishing disc is reacted with boron and nitrogen in cBN to produce B2O3 and NOx, which are removed, resulting in execution of mechanochemical polishing to produce a smooth polishing surface. |
