| 摘要 |
A semiconductor memory device of the present invention comprises a memory cell group having a plurality of memory cells for storing data therein and a plurality of word lines each used to select a desired memory cell, a first signal line held at a first potential which enables the memory cells to operate sufficiently, a second signal line held at a second potential which enables a driver circuit to operate sufficiently, the driver circuit provided between the first signal line and the word lines, a decoder for receiving an address signal therein and for outputting access request signals each used to obtain access to a memory cell designated by the received address signal, at least one driving signal generator for receiving one of the access request signals therein and supplying a driving signal having the second potential of the second signal line to the driver circuit so as to activate the driver circuit, a first booster operated in response to the turning on of a power source so as to set the second signal line to the second potential, and a second booster operated in response to the generation of the access request signal so as to set the second signal line to the second potential.
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