发明名称 Method for the electrical insulation of a circuit function element on a semiconductor component
摘要 Method for the electrical insulation of a function element on a semiconductor component, wherein the function element is etched into a mesa (9) using a mask (8). A dielectric (10) is then applied surface-wide at least up to the height of the mesa (9). The more deeply disposed portions of this dielectric layer are covered with photoresist (11), and the photoresist (11) is caused to flow by tempering and, thus, is caused to level the surface. Finally, the photoresist (11) and the dielectric (10) are re-etched with the same etching rate until the mesa is uncovered.
申请公布号 US5346862(A) 申请公布日期 1994.09.13
申请号 US19930055351 申请日期 1993.05.03
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 SCHLEICHER, LOTHAR;ZWICKNAGL, HANS-PETER;SCHOENING, ELKE
分类号 H01L21/302;H01L21/3065;H01L21/316;H01L21/318;H01L21/76;(IPC1-7):H01L21/465 主分类号 H01L21/302
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