发明名称 |
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF |
摘要 |
A semiconductor device having a protective insulating film is disclosed. This semiconductor device includes a semiconductor substrate, and an interconnection pattern provided on said semiconductor substrate and electrically connected with said elements. A silicon-oxy-nitride film is provided on said semiconductor substrate so as to cover said interconnection pattern. The silicon-oxy-nitride film is deposited in accordance with a chemical vapor deposition Method using plasma, using a mixture gas including organic silane and a nitriding gas and has therefore superior step coverage. The silicon-oxy-nitride film has a superior barrier characteristic to moisture coming in from the outside. A semiconductor device superior in reliability such as moisture resistance is thus obtained. |
申请公布号 |
KR940008373(B1) |
申请公布日期 |
1994.09.12 |
申请号 |
KR19910005741 |
申请日期 |
1991.04.10 |
申请人 |
MITSUBISHI ELECTRIC CORP. |
发明人 |
HARADA, SHIGERU |
分类号 |
H01L21/318;C23C16/30;C23C16/40;H01L21/31;H01L21/314;H01L23/29 |
主分类号 |
H01L21/318 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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