发明名称 WEFER STORAGE METHOD AND THE EQUIPMENT OVER ATMOSPHERIC PRESSURE
摘要 The apparatus improves the reliability of gate oxide by preventing the contamination of carbon and inhibiting the growth of the native oxide on the wafer. The apparatus comprises (A) the first chamber (6) connecting a check valve (4) in the shoe (1) inlet; (B) an in-flow pressure controller (2) operated by a gas pressure monitored by a valve (10) with a spring (11); (C) the second chamber (14) in the opposite direction of the first chamber connecting outlet check valve (20); (D) an out-flow pressure controller (3) with a valve (16) opening and closing a gas pathway (15).
申请公布号 KR940008315(B1) 申请公布日期 1994.09.12
申请号 KR19910021093 申请日期 1991.11.25
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 PARK, TAE - HUN;SHIM, TAE - YON;KIM, YONG - KWAN;KO, YONG - SON
分类号 H01L21/48;(IPC1-7):H01L21/48 主分类号 H01L21/48
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