发明名称 ANNEALING METHOD USING LASER
摘要 The laser heat treatment improves the homogeneity of silicon during the phase transformation from amorphous silicon to polycrystal silicon. The heattreatment comprises (A) forming an amorphous silicon layer (2) on a glass (1); (B) forming a supplementary layer (3) with small humps on the amorphous silicon layer; (C) overlappingly irradiating the thicker region of the supplementary layer.
申请公布号 KR940008378(B1) 申请公布日期 1994.09.12
申请号 KR19910023899 申请日期 1991.12.23
申请人 GOLDSTAR CO., LTD. 发明人 CHAE, KI - SONG
分类号 H01L21/324;(IPC1-7):H01L21/324 主分类号 H01L21/324
代理机构 代理人
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