发明名称 MASKING METHOD OF PLANERIZED ALUMINUM ALLOYED WIRE
摘要 The method distinguishes an align key hole by selectively removing Al alloy on the align key hole. The method comprises (A) forming an isolating layer (2) on a substrate (1); (B) depositing an Al alloy layer (4) and spreading a photoresist (10) on the Al alloy layer; (C) removing the photoresist on the scribe region (8); (D) etching the Al alloy layer by masking the photoresist and restoring the shape of the original align key hole; (E) masking the Al alloy wiring.
申请公布号 KR940008376(B1) 申请公布日期 1994.09.12
申请号 KR19910017366 申请日期 1991.10.04
申请人 HYUNDAI ELECTRONICS CO., LTD. 发明人 KIM, HON - DO;KIM, SANG - YONG;SONG, YONG - UK
分类号 H01L21/3205;(IPC1-7):H01L21/320 主分类号 H01L21/3205
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