Maske und Verfahren zu deren Herstellung

摘要

A mask, which can form a correct exposure pattern on a photoresist a semiconductor wafer having steps 110, comprises a substrate 14 having steps A, B which are opposite to the stepped structure on said semiconductor wafer. Alternatively part of the mask pattern on substrate 2 may be covered with semitransparent layer 30, which corresponds to step 110 on the semiconductor. Hence, a clean and correct pattern can be formed by controlling the amount of exposure irradiated onto step and non-step regions on a semiconductor wafer.