A composite material useful as a diode capable of operating at a high temperature, i.e., 500 to 600 DEG C or a semiconductor optical device capable of emitting ultraviolet rays is provided which comprises single crystal diamond having electric insulation and single crystal cubic boron nitride formed on one surface of the single crystal diamond as a substrate in such a manner that the single crystal cubic boron nitride has the same plane index on the substrate.
申请公布号
DE69011142(D1)
申请公布日期
1994.09.08
申请号
DE1990611142
申请日期
1990.01.18
申请人
SUMITOMO ELECTRIC INDUSTRIES, LTD., OSAKA, JP
发明人
YOSHIDA, KATSUHITO, C/O ITAMI WORKS OF, ITAMI-SHI, HYOGO-KEN, JP;TSUJI, KAZUSWO, C/O ITAMI WORKS OF, ITAMI-SHI, HYOGO-KEN, JP